1994. 3. 23
1/1
SEMICONDUCTOR
TECHNICAL DATA
KTA1658
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
FEATURES
Good Linearity of h
FE
.
Complementary to KTC4369.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
10.30 MAX
15.30 MAX
2.70 0.30
0.85 MAX
3.20 0.20
3.00 0.30
A
B
C
D
E
F
G
12.30 MAX
0.75 MAX
H
13.60 0.50
3.90 MAX
1.20
1.30
2.54
4.50 0.20
6.80
2.60 0.20
10
J
K
L
M
N
O
P
Q
R
F
O
Q
1
2
3
L
P
N
B
G
J
M
D
N
T
T
H
E
R
T
V
S
K
L
U
T
S
0.5
5
25
2.60 0.15
V
U
D
A
C
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
(1) Classification O:70~140, Y:120~240
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-30
V
Collector-Emitter Voltage
V
CEO
-30
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
3
A
Base Current
I
B
-0.3
A
Collector Power Dissipation (Tc=25 )
P
C
15
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-20V, I
E
=0
-
-
-1.0
A
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-1.0
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-10mA, I
B
=0
-30
-
-
V
DC Current Gain
h
FE
(1) (Note)
V
CE
=-2V, I
C
=-0.5A
70
-
240
h
FE
(2)
V
CE
=-2V, I
C
=-2.5A
25
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-2A, I
B
=-0.2A
-
-0.3
-0.8
V
Base-Emitter Voltage
V
BE
V
CE
=-2V, I
C
=-0.5A
-
-0.75
-1.0
V
Transition Frequency
f
T
V
CE
=-2V, I
C
=-0.5A
-
100
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
40
-
pF
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